MOS Transistor Parameter Analyzer
This MOS transistor parameter analyzer measures threshold voltage UGS(th), internal resistance RDS, transconductance gm, and withstand voltage V(BR)DS. Test ranges include UGS(th): 0.1~9.9V, RDS: 0.001~9.999Ω, gm: 0.10~10.00S, V(BR)DS: 50~650V.
Technical Specifications
Overview
Precision MOS Transistor Analysis
The MOS Transistor Parameter Analyzer is a precision instrument engineered for the accurate testing and selection of MOS transistors in research, development, and quality control environments. It features continuous test current adjustment to simulate various working conditions and provides real-time monitoring of critical parameters. With advanced testing capabilities for high-current RDS evaluation, this device ensures component reliability and optimal performance matching.
Measurement Capabilities
Parameter Test Ranges
| Parameter | Range |
|---|---|
| Threshold Voltage (UGS(th)) | 0.1 - 9.9 V |
| Internal Resistance (RDS) | 0.001 - 9.999 Ω |
| Transconductance (gm) | 0.10 - 10.00 S |
| Withstand Voltage (V(BR)DS) | 50 - 650 V |
- Measured Parameters
- Threshold Voltage (UGS(th))Internal Resistance (RDS)Transconductance (gm)Withstand Voltage (V(BR)DS)
Operational Features
Test Current Range
0.1 A
Min Current
5 A
Max Current
Key Operational Features
- Continuously adjustable test current for simulation of different working situations
- Freely set judging limits and grouping values
- Automatic alarm system when measured values exceed limits
- Advanced high-current RDS testing technology
