Copper Sputtering Target (4N-5N Purity)
This copper sputtering target is available in purities ranging from 4N to 5N. It is produced using melting technology and applied in semiconductor, decorative coating, and advanced packing fields.
Technical Specifications
Product Overview
High-Purity Copper Sputtering Targets
These high-purity copper sputtering targets are engineered for advanced thin-film deposition in semiconductor, decorative coating, and touch screen manufacturing. By employing advanced melting technology and controlled microstructure deformation, these targets provide superior electrical and thermal conductivity while minimizing particle formation during the PVD process. Available in both planar and rotary configurations to meet diverse industrial requirements.
Technical Specifications
Available Forms
- Planar Target (up to G8.5 generation)
- Rotary Target
- Purity Levels
- 99.9%99.99% (4N)99.999% (5N)99.9999% (6N)
- Oxygen Content
- < 1 ppm
Performance Features
Key Performance Indicators
29
Atomic Number
1 ppm
Max Oxygen Content
Analytical Methods
| Component | Method |
|---|---|
| Metallic Elements | GDMS and ICP-OES |
| Gas Elements | LECO |
